Extraction of Nonlinear X-Parameters from FDTD Simulation of a One-Port Device

A formulation is developed for X-Parameters extraction of nonlinear devices when a finite-difference time-domain electromagnetic simulation is used. A simulation domain containing a diode is tested, and several excitation waveforms are applied to capture the diode's nonlinear behavior. Post-processing of simulation results allows for the extraction of X-Parameter values, and a good agreement is obtained when comparing the results from the developed procedure and a commercial simulator.

Automated summary

A formulation for X-Parameters extraction of nonlinear devices using finite-difference time-domain electromagnetic simulation is developed. Testing a simulation domain containing a diode and applying various excitation waveforms, followed by post-processing of simulation results, allows for the extraction of X-Parameter values with good agreement between the developed procedure and a commercial simulator.