相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications
Dong-Hwan Kim et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)
Formation of Ni Diffusion-Induced Surface Traps in GaN/Al x Ga1-x N/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition
R. S. Kajen et al.
JOURNAL OF ELECTRONIC MATERIALS (2016)
Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer
Ray-Ming Lin et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs
Hsien-Chin Chiu et al.
MICROELECTRONICS RELIABILITY (2011)
Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate
J. Park et al.
ELECTRONICS LETTERS (2010)
High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator
S. Yagi et al.
SOLID-STATE ELECTRONICS (2006)
Investigations of HfO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
C Liu et al.
APPLIED PHYSICS LETTERS (2006)
ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors
Y Dora et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors -: art. no. 143501
P Kordos et al.
APPLIED PHYSICS LETTERS (2005)
Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal
N Miura et al.
SOLID-STATE ELECTRONICS (2004)
Copper gate AlGaN/GaN HEMT with low gate leakage current
JP Ao et al.
IEEE ELECTRON DEVICE LETTERS (2003)
Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions
ZJ Lin et al.
APPLIED PHYSICS LETTERS (2003)
Characterisation of iridium Schottky contacts on n-AlxGa1-xN
V Kumar et al.
ELECTRONICS LETTERS (2003)
分享论文
