Fabrication and characterization of lead sulfide and multi-walled carbon nanotube based field effect transistors using low cost chemical route

In this paper, lead sulfide (PbS) and multi-walled carbon nanotube (MWCNT) based field effect transistors (FETs) have been fabricated by using simple and low cost solution processing. The fabricated devices having channel length of 3 mm have been functionalized as a n-channel FETs. It has been observed from the output and the transfer characterstics that at the gate-to-source voltage (V (GS)) of 15 V and drain-to-source voltage (V (DS)) of 10 V, the on-state-drive current (I (ON)) for PbS and MWCNT based FETs is 42.23 mu A and 25.52 mu A, respectively, whereas at V (GS) = 0 V and V (DS) = 10 V the off-state leakage current (I (OFF)) is 0.183 mu A and 0.11 mu A, respectively. Further, for PbS and MWCNT based FETs at the measured threshold voltage of 5.75 V and 6.3 V, the sub-threshold swing is found to be 5.23 V/Decade and 6.12 V/Decade, respectively. The morphological and structural studies have been performed to speculate the crystallinity and the topography of the individual layers. The chemical composition of the different layers clearly justify the deposition of the material layers in the fabricated FETs. In addtion, this work also proposes a new approach for fabricating the PbS and MWCNT based FETs.

Automated summary

In this paper, field effect transistors (FETs) based on lead sulfide (PbS) and multi-walled carbon nanotube (MWCNT) were successfully fabricated using a simple and low-cost solution processing method. The devices demonstrated different on-state drive currents and off-state leakage currents at different voltages. Morphological and structural studies were conducted to analyze the crystallinity and chemical composition of the layers in the fabricated FETs.