A photoelectrochemical sensor based on an acetylcholinesterase-CdS/ZnO-modified extended-gate field-effect transistor for glyphosate detection

A new photoelectrochemical enzyme biosensor based on an extended-gate field-effect transistor (EGFET) was constructed for the highly sensitive detection of glyphosate based on the inhibition of acetylcholinesterase (AChE) activity by glyphosate. First, a two-step hydrothermal method was used to introduce ZnO and CdS onto an activated indium tin oxide (ITO) electrode to prepare a CdS/ZnO/ITO electrode. Then, AChE was immobilized on CdS/ZnO/ITO with chitosan to obtain an AChE/CdS/ZnO EGFET sensor. Under optimal experimental conditions, the logarithmic value of glyphosate in the range of 1.0 x 10(-15)-1.0 x 10(-11) mol L-1 exhibited a good linear relationship with the photo-drain current response. The detection limit was 3.8 x 10(-16) mol L-1 (signal-to-noise ratio = 3). The results show that the AChE/CdS/ZnO EGFET sensor has extremely high sensitivity and good selectivity. Moreover, the sensor was used for the determination of glyphosate in vegetables, demonstrating its application for the real-time detection of samples.

Automated summary

A new photoelectrochemical enzyme biosensor based on EGFET technology was developed for highly sensitive detection of glyphosate. The sensor has an extremely low detection limit, high sensitivity, and good selectivity. The experimental results demonstrate its application for real-time detection of glyphosate in vegetables.