A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor

Herein, a true random number generator (TRNG) based on a CuxTe1-x diffusive memristor (DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the TS behavior contributes to the randomness of the TRNG system. The switching behavior is discussed through field-induced nucleation theory and surface diffusion dynamics. Demonstrating the performance of TRNG as a hardware security application, the DM-based TRNG passes all 15 National Institute of Standards and Technology randomness tests without any post-processing step, even in high-temperature conditions. Moreover, a nonlinear-feedback shift register is implemented for a high-speed TRNG, producing the highest rate among the reported volatile-memristor-based TRNGs.

Automated summary

In this study, a true random number generator based on a CuxTe1-x diffusive memristor using its threshold switching behavior is reported. The TRNG system showed excellent performance in passing all 15 NIST randomness tests without post-processing and even in high-temperature conditions. Additionally, a high-speed TRNG with a nonlinear-feedback shift register was implemented, demonstrating the highest rate among reported volatile-memristor-based TRNGs.