CuO Single-Nanowire-Based White-Light Photodetector

This letter reports the fabrication of copper-oxide (CuO) single-nanowire (SNW) back-to-back Schottky diode for white light detection. The device fabrication includes the synthesis of nanowires by thermal oxidation of copper, followed by microcantilever contact print (mu CCP) of silver nanoparticles (AgNP) electrodes. The metal-semiconductor-metal (MSM) structure exhibits a dark current of 1.40 nA and photocurrent of 2.55 mu A for +/- 6 V bias. The AgNP/CuO SNW/AgNP device reveals a sharp rise and recovery for continuous operation under the bias stress. Further, fabricated device exhibits a remarkable photodetection with photosensitivity 1820, responsivity 4085 AW(-1), detectivity 3.81 x 10(13)cmHz(0.)5 W-1, and external quantum efficiency of 9.95 x 10(5) %.

Automated summary

This letter presents the fabrication of a copper-oxide single-nanowire back-to-back Schottky diode for white light detection, which exhibits remarkable photodetection performance. The device shows a dark current of 1.40 nA and a photocurrent of 2.55 mu A under a +/- 6 V bias, with an external quantum efficiency of 9.95 x 10(5) %.