Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure

In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (10(14) - 10(15) jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.

Automated summary

This letter discusses the design of bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure for broadband optical detection. By carefully selecting materials and matching energy levels, the phototransistors can detect light from ultraviolet to near-infrared. Through field effect regulation, dark current is suppressed and the phototransistors exhibit high normalized detectivity.