期刊
PHYSICAL REVIEW B
卷 103, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.245131
关键词
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资金
- Ministry of Science and Technology of Taiwan, Republic of China [MOST 108-2112-M-213-001MY3]
- RIKEN [20140019]
- Spanish Ministry of Science and Innovation (MICINN
- Ministerio de Ciencia e Innovacion de Espana) [PIE201060E013]
- Spanish National Research Council (CSIC
- Consejo Superior de Investigaciones Cientiificas)
We studied the electronic structure of single-crystal Tb0.5Sr0.5MnO3 using various spectroscopy techniques, revealing that the compound is a strongly correlated charge transfer type semiconductor. The analysis of core level photoemission and X-ray absorption spectra confirmed the presence of Mn3+ and Mn4+ states. Resonant photoemission spectroscopy showed enhancement of Mn 3d partial density of states and two-hole correlation satellites, indicating the complex electronic behavior of Tb0.5Sr0.5MnO3.
We study the electronic structure of single-crystal Tb0.5Sr0.5MnO3, a non-charge-ordered mixed-valent semiconductor which exhibits a glassy magnetic ground state. We use the techniques of soft x-ray photoemission, hard x-ray photoemission, x-ray absorption, and resonant photoemission spectroscopy to investigate the occupied and unoccupied electronic states of Tb0.5Sr0.5MnO3. Core level photoemission and x-ray absorption spectroscopy allow us to determine the valence states of Tb, Sr, and Mn ions in Tb0.5Sr0.5MnO3. Model charge transfer multiplet calculations of core level photoemission and x-ray absorption spectra are employed to separate out the Mn3+ and Mn4+ states and confirm their relative concentrations. Resonant photoemission spectroscopy across the Mn 2p-3d threshold shows clear resonant enhancement of the Mn 3d partial density of states and two-hole correlation satellites. A Cini-Sawatzky analysis gives on-site Coulomb energy U-dd similar to 5.5 +/- 0.2 eV for the Mn 3d(n) states and U-pd = 0.7 eV +/- 0.2 eV for the Mn 3d(n+1)(L) under bar (1) states. The 0 1s-2p resonant photoemission is used to identify the O 2p two-hole correlation satellite which provides U-pp similar to 3.4 +/- 0.2 eV for the O 2p states. Valence band photoemission indicates a small-gap semiconductor (<100 meV) consistent with electrical transport measurements. The estimated electronic structure parameters of the on-site Coulomb energies, in combination with the charge transfer energy and the hybridization strength obtained from the model calculations, indicate that Tb0.5Sr0.5MnO3 is a strongly correlated charge transfer type semiconductor.
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