Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

A bipolar resistive switching (RS) behavior with an asymmetry I-V curve was impressively observed in the Ag/Sb2Te3/Pt heterojunction. The heterojunction with low operating voltage (similar to 0.6 V) could be repeatedly cycled more than 1000 times between high- and low-resistance states steadily, the cumulative probability curves of which were substantially parallel. Numerical simulation was performed to clarify the electrical conduction mechanism of different resistance states. Based on the results, the synergy model of the conductive filament and the Schottky emission is proposed. This work enriches the material system of resistive random access memory, which is conducive to a profound understanding of the physical mechanism behind the RS behavior, thereby facilitating the further application of memristors in the field of synaptic bionics.

Automated summary

A bipolar resistive switching behavior was observed in the Ag/Sb2Te3/Pt heterojunction, with numerical simulation clarifying the electrical conduction mechanism and proposing a synergy model of the conductive filament and Schottky emission. This work enriches the material system of resistive random access memory and promotes a profound understanding of the physical mechanism behind RS behavior for further application in synaptic bionics.