4.7 Article

Deep UV Sensors Enabling Solar-Blind Flame Detectors for Large-Area Applications

期刊

IEEE SENSORS JOURNAL
卷 21, 期 13, 页码 14815-14821

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2021.3071980

关键词

Flame detector; gallium oxide; poly-Si thin-film transistors; UV detectors

资金

  1. AFOSR [FA9550-18-1-0019]
  2. Nanoholdings LLC
  3. CONACyT-Mexico

向作者/读者索取更多资源

This study demonstrates large-area compatible, solar-blind deep-ultraviolet sensors based on active pixels with CMOS amplifiers. The sensors exhibit high responsivity and output voltage signals, and the integration of Ga-2 O-3 sensors on the same substrate ensures compatibility with large-area applications. The active pixel sensor shows improved performance compared to discrete sensors.
Large-area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, and the CMOS inverter amplifier exhibits a gain of 210 VN. The Ga-2 O-3-based sensors were integrated on the same substrate depositing the films using magnetron sputtering at room temperature, ensuring its compatibility with large-area applications. The responsivity of discrete Ga-2 O-3 sensors was evaluated at different wavelengths in the deep-ultraviolet and visible ranges, and showed a maximum responsivity of 51 MW for a wavelength of 232 nm, with a deep-ultraviolet to visible light rejection ratio of approximately 10(2). The active pixel sensor was implemented as flame detector resulting in an output voltage signal of up to 2 V when the system was exposed to a flame under regular background illumination conditions.

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