4.7 Article

A nanoimprinted artificial engram device

期刊

NANOSCALE HORIZONS
卷 6, 期 9, 页码 718-728

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nh00064k

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  1. National Natural Science Foundation of China [61705042, 11975081, 51677031]

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The research demonstrates an artificial engram device based on nanoimprinted curable resin, meeting all requirements for artificial engrams such as synaptic plasticity, long memory storage time, and asymmetric memorizing-forgetting behavior. By comparing with biological counterparts, the concept of memory formation, manipulation, and implantation using the artificial engram device is illustrated.
At present, mainstream neuromorphic hardware is based on artificial synapses; however, an engram, instead of a synapse, has recently been confirmed as the basic unit of memory, which verifies the engram theory proposed by Richard Semon in 1904. Here, we demonstrate an artificial engram device based on a nanoimprinted curable resin. The variation in the relative diffraction efficiency based on the asymmetric reversible topological change of the nanoimprinted resin enables the device to meet all the requirements for artificial engrams, including synaptic plasticity, long memory storage time, asymmetric memorizing-forgetting behaviour and measurable changes and responses. On this basis, we demonstrate the concept of realizing memory formation, memory manipulation and implantation, and memory consolidation using our artificial engram device in comparison with its biological counterpart.

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