期刊
JOURNAL OF SEMICONDUCTORS
卷 42, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/42/1/014102
关键词
memristor; artificial synapse; short-term plasticity; long-term potentiation; image Boolean operations
资金
- Ministry of Science and Technology of China [2018YFE0118300, 2019YFB2205100]
- NSFC Program [11974072, 51701037, 51732003, 51872043, 51902048, 61774031, 61574031, U19A2091]
- 111 Project [B13013]
- Ministry of Education of China [6141A02033414]
- China Postdoctoral Science Foundation [2019M661185]
- Fundamental Research Funds for the Central Universities [2412019QD015]
- Jilin Province [JJKH20201163KJ]
The study introduces a WOx-based memristive device capable of mimicking voltage-dependent synaptic plasticity, demonstrating short-term and long-term plasticity. The experiment shows long-term enhancement of conductance induced by high intensity stimulation, representing permanent memory behavior, as well as Boolean operations in the synaptic array.
The development of electronic devices that possess the functionality of biological synapses is a crucial step towards neuromorphic computing. In this work, we present a WOx-based memristive device that can emulate voltage-dependent synaptic plasticity. By adjusting the amplitude of the applied voltage, we were able to reproduce short-term plasticity (STP) and the transition from STP to long-term potentiation. The stimulation with high intensity induced long-term enhancement of conductance without any decay process, thus representing a permanent memory behavior. Moreover, the image Boolean operations (including intersection, subtraction, and union) were also demonstrated in the memristive synapse array based on the above voltage-dependent plasticity. The experimental achievements of this study provide a new insight into the successful mimicry of essential characteristics of synaptic behaviors.
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