Phase-change memory based on matched Ge-Te, Sb-Te, and In-Te octahedrons: Improved electrical performances and robust thermal stability

Phase-change memory (PCM) has been developed for three-dimensional (3D) data storage devices, posing huge challenges to the thermal stability and reliability of PCM. However, the low thermal stability of Ge2Sb2Te5 (GST) limits further application. Here, we demonstrate PCM based on In0.9Ge2Sb2Te5 (IGST) alloy, showing 180 degrees C 10-years data retention, 6 ns set speed, one order of magnitude longer life time, and 75% reduced power consumption compared to GST-based device. The In can occupy the cationic positions and the In-Te octahedrons with good phase-change properties can geometrically match well with the host Ge-Te and Sb-Te octahedrons, acting as nucleation centers to boost the set speed and enhance the endurance of IGST device. Introducing stable matched phase-change octahedrons can be a feasible way to achieve practical PCMs.

Automated summary

In this study, we demonstrate a phase-change memory (PCM) based on In0.9Ge2Sb2Te5 (IGST) alloy, which shows improved thermal stability and reliability compared to traditional Ge2Sb2Te5 storage devices. The introduction of In can enhance the nucleation centers of the device, boosting set speed and endurance. Matching stable phase-change octahedrons could be a feasible way to achieve practical PCMs.