4.7 Article

A p-type PbS quantum dot ink with improved stability for solution processable optoelectronics

期刊

CHEMICAL COMMUNICATIONS
卷 57, 期 65, 页码 8091-8094

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1cc03014k

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资金

  1. US NSF [CHE-1613388]
  2. NSF IGERT fellowship [OIA-1250052]

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A highly stable p-type PbS-QDs ink was prepared using a single-step biphasic ligand exchange route, leading to improved film resistivity and surface roughness compared to previous reports, with proof of concept photovoltaic devices showing efficiency > 5.5%.
A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA) capped QDs stable in benzylamine solvent over a period of weeks or longer. The film resistivity, 1.45 k omega cm, is an order magnitude lower and surface roughness, similar to 0.5 nm, is superior vs. PbS films reported so far, and proof of concept photovoltaic devices showed efficiency > 5.5%.

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