A CMOS Rectifier Employing Body Biasing Scheme for RF Energy Harvesting

This paper presents a CMOS rectifier for RF energy harvesting. The structure of the proposed design is based on a modified cross-coupled architecture. It employs an adaptive body biasing technique to lower the transistor threshold voltage (V-th) when the PMOS is ON. This would increase the conduction current. Moreover, this technique increases V-th when the PMOS is OFF. This would minimize the current flowing in the reverse bias condition. The proposed design is simulated using 0.18 mu m TSMC CMOS technology under various loading conditions and an input frequency of 953 MHz. A peak power conversion efficiency (PCE) of 78.2% is achieved at an input power of -27.5 dBm and a 100 k Omega load.

Automated summary

This paper presents a CMOS rectifier for RF energy harvesting based on a modified cross-coupled architecture. It employs an adaptive body biasing technique to increase conduction current and minimize reverse bias current flow. The design achieves a peak power conversion efficiency of 78.2% at an input power of -27.5 dBm and a 100 kΩ load under various loading conditions and an input frequency of 953 MHz.