期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 3, 期 7, 页码 2941-2947出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c00225
关键词
contact resistance; doping; hole density; p-type WSe2; tungsten oxyselenide; UV-O-3 oxidation
资金
- National Science Foundation through CAREER Award [ECCS-1752401]
- Center for Precision Assembly of Superstratic and Superatomic Solids [DMR-1420634]
This study reports the use of tungsten oxyselenide as a dopant to achieve the lowest total p-type contact resistance and high dopant density in sub-5 nm thin WSe2. The doping remains active at low temperatures and shows promising stability, leading to significant improvement in device characteristics and potential for high-performance p-type transistors.
The high contact resistance to 2D semiconductors must be reduced to attain their full potential for next-generation applications. In this work, we report the lowest total p-type contact resistance (642 Omega.mu m) to sub-5 nm thin WSe2 using a monolayer dopant, namely tungsten oxyselenide (TOS), that induces degenerate doping densities as high as similar to 4 x 10(13) cm(-2). Moreover, this doping remains active even at temperatures as low as 77 K, enabling a pathway toward high-quality contacts for low-temperature applications. Electrical measurements taken four months apart on TOS-WSe2 devices kept in ambient conditions show less than an order of magnitude reduction in the hole density and demonstrate promising stability of the doping. In addition, we show a drastic improvement in device characteristics through area-selective doping of the contact, which opens an avenue toward achieving high-performance p-type transistors with ultrathin 2D WSe2.
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