Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs

A comparative study is carried out to clarify the energy distribution of traps under hot carrier degradation (HCD) and negative bias temperature instability (NBTI) in short channel p-FinFETs. Two sources of traps, pre-existing traps and generated traps, are identified and their energy profiles are separated using Discharging-based Multi-pulse (DMP) method. The pre-existing traps are located below valance band of silicon (E-v), while the two generated traps are located in 0.4eV above E-v and near conduction band (E-c) of silicon, respectively. The two generated traps are highly sensitive to stress voltage and stress time under NBTI and HCD, however, the generated trap 1 is more sensitive to stress temperature than generated trap 2 under HCD. When switching to long channel devices, the overall degradation is reduced due to less trap generation.

Automated summary

In this study, a comparative analysis of trap energy distribution in short channel p-FinFETs under HCD and NBTI was conducted. It was found that the generated traps were highly sensitive to stress voltage and stress time, but switching to long channel devices could reduce trap generation and overall degradation.