Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Various methods have been investigated to manipulate the electrical properties of MoS2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage (V-TH), which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.

Automated summary

The electrical properties of MoS2 transistors have been manipulated using metal gates with different work functions to modulate the threshold voltage, which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages and the obtained voltage gain is over 35.