出版社
IEEE
DOI: 10.1109/EDTM50988.2021.9421016
关键词
Graphene nanomesh; single-electron device; helium ion microscope
资金
- Japan Society for the Promotion of Science (JSPS) [18H03861, 19H05520]
- Grants-in-Aid for Scientific Research [18H03861] Funding Source: KAKEN
The successful observation of a single electron phenomenon on a large area suspended graphene nanomesh device patterned by the helium ion beam milling technique provides a more practical way to use graphene for quantum technology.
We report on the successful observation of a single electron phenomenon on a large area suspended graphene nanomesh (GNM) device patterned by the helium ion beam milling (HIBM) technique. The HIBM can be used to further regular the shape of the suspended graphene nanoribbon after the conventional RIE process, and also drill the periodic nanopores on suspended graphene to build potential barriers. It provides a more practical way to use graphene for quantum technology.
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