3.8 Proceedings Paper

Quantum dot formation on suspended graphene nanomesh by helium ion beam milling technology

出版社

IEEE
DOI: 10.1109/EDTM50988.2021.9421016

关键词

Graphene nanomesh; single-electron device; helium ion microscope

资金

  1. Japan Society for the Promotion of Science (JSPS) [18H03861, 19H05520]
  2. Grants-in-Aid for Scientific Research [18H03861] Funding Source: KAKEN

向作者/读者索取更多资源

The successful observation of a single electron phenomenon on a large area suspended graphene nanomesh device patterned by the helium ion beam milling technique provides a more practical way to use graphene for quantum technology.
We report on the successful observation of a single electron phenomenon on a large area suspended graphene nanomesh (GNM) device patterned by the helium ion beam milling (HIBM) technique. The HIBM can be used to further regular the shape of the suspended graphene nanoribbon after the conventional RIE process, and also drill the periodic nanopores on suspended graphene to build potential barriers. It provides a more practical way to use graphene for quantum technology.

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