Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization

We demonstrate the fabrication and characterization of large-area van der Waals heterostructure array composed of chemical vapor deposition (CVD) grown multilayer (ML) 2H-MoTe2 and single-layer (SL) 2H-MoS2, which exhibits excellent rectifier properties. The transfer characteristics of field-effect transistors (FETs) are also investigated. Our work acquires excellent homogeneity and device performance, which facilitates the application of two-dimensional (2D) materials in electronics.

Automated summary

This work demonstrates the fabrication and characterization of large-area van der Waals heterostructure array composed of CVD grown 2H-MoTe2 and 2H-MoS2, showing excellent rectifier properties. The study also investigates the transfer characteristics of FETs, achieving homogeneity and high device performance, which advances the application of 2D materials in electronics.