期刊
JOURNAL OF MATERIALS CHEMISTRY A
卷 9, 期 38, 页码 21939-21947出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ta04330g
关键词
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资金
- National Key R&D Program of China [2018YFB1500105]
- Natural Science Foundation of Jiangsu Province [BK20200187]
- Key R&D Project of Jiangsu Province [BE2017006-3]
- European Union [763977]
- Swiss National Science Foundation [SNSF 20021E_186390]
Stable wide-bandgap perovskite devices with high efficiencies and open-circuit voltages are achieved through a suitable combination of vacuum-assisted solution processing and interfacial passivation. This approach can be translated to multiple perovskite compositions, enabling the fabrication of efficient and stable wide-bandgap cells in monolithic silicon tandem structures with one of the highest efficiencies reported for n-i-p tandem devices.
Perovskite/silicon tandem solar cells offer the potential to surpass the power conversion efficiency (PCE) of single-junction solar devices beyond the Shockley-Queisser limit at relatively low costs. However, obtaining wide-bandgap materials that provide improved efficiency and appropriate stability is very challenging due to their increased trap density and frequent phase instability under light. Here we report stable wide-bandgap (similar to 1.7 eV) perovskite devices achieving efficiencies of 19.67%, and open-circuit voltages (V-oc) above 1.2 V via a suitable combination of vacuum-assisted solution processing (VASP) and interfacial passivation. Such a facile approach can be translated to multiple perovskite compositions, enabling the fabrication of efficient and stable wide-bandgap cells and their integration into monolithic silicon tandem structures with 24.01% PCE, one of the highest efficiencies for n-i-p tandem devices reported so far.
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