Passive devices at 2 μm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited]

As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 mu m waveband. The development of the 2 mu m silicon photonic platform mainly depends on the performance of passive devices. In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process. The designed micro-ring resonator with a 0.6 mu m wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 x 10(5). The propagation loss is calculated as 1.62 dB/cm. In addition, the waveguide crossing, multimode interferometer, and Mach-Zehnder interferometer were demonstrated at 2 mu m with good performances.

Automated summary

In this work, passive devices for the 2 μm waveband were fabricated in a silicon photonic multi-project wafer process, including a micro-ring resonator, waveguide crossing, multimode interferometer, and Mach-Zehnder interferometer. Experimental results showed that these devices performed well in the 2 μm waveband, providing important insights for the development of the 2 μm silicon photonic platform.