Direct roll transfer printed silicon nanoribbon arrays based high-performance flexible electronics

Transfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the 'direct roll transfer' as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (similar to 95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (mu(eff)) >600 cm(2)/Vs, high on/off ratio (I-on/(off)) of around 10(6), and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.

Automated summary

The developed 'direct roll transfer' method allows for printing high-mobility inorganic nanostructures without the use of an elastomeric stamp, achieving excellent registration and transfer yield. This versatile and transformative technique has been demonstrated with silicon nanoribbons, showing high performance in field-effect transistors and has the potential for printing high-performance electronics on large, flexible substrates.