Facilitated magnesium atom adsorption and surface diffusion kinetics via artificial bismuth-based interphases

Robust bismuth-based interphases, comprised of bismuth and bismuth oxides, were developed using galvanic replacement reactions. Facilitated Mg atom adsorption and distinct interfacial Mg atom migration were demonstrated, greatly lowering the electrochemical energy penalty (23 mV for the nucleation process and 69 mV for the growth process at 1.0 mA cm(-2)).

Automated summary

Robust bismuth-based interphases were developed using galvanic replacement reactions, comprised of bismuth and bismuth oxides. The facilitated Mg atom adsorption and distinct interfacial Mg atom migration greatly reduced the electrochemical energy penalty, with 23 mV for the nucleation process and 69 mV for the growth process at 1.0 mA cm(-2).