4.6 Article

Ultrafast transformation of PbI2 in two-step fabrication of halide perovskite films for long-term performance and stability via nanosecond laser shock annealing

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 9, 期 37, 页码 12819-12827

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1tc02475b

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资金

  1. National Key R&D Program of China [2018YFB1107700]

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The two-step sequential deposition method is reliable for synthesizing large-area and high-quality perovskite films, but the slow transformation of PbI2 to perovskites affects long-term performance and stability. A nanosecond laser shock annealing process induces ultrafast diffusion of organic salt into the PbI2 layer, modulating crystalline structure and electron transport kinetics in the fabricated films. This method enhances band structure changes and improves carrier lifetime, resulting in higher responsivity and detectivity.
A two-step sequential deposition has been a reliable method to synthesize large-area and high-quality perovskite films due to its better reproducibility. However, the long-term performance and stability of thin films are adversely affected by the slow and incomplete transformation of PbI2 to perovskites. Here, we propose a nanosecond laser shock annealing process to induce ultrafast organic salt diffusion into the PbI2 layer to modulate the crystalline structure, residual tensile strain, and electron transport kinetics in two-step fabricated halide perovskite films. We found that pulse-laser induced ultrafast diffusion reduces the thickness of the residual PbI2 layer at the bottom of the perovskite film fabricated by a two-step method, resulting in the reduction of residual tensile strain by over seven times. The shocking moment of the nanosecond laser promotes the diffusion of the organic salt to the PbI2 layer. Compared to traditional thermal annealing, ultrafast laser shock annealing enhances the molecular interaction, which significantly affects the orbital overlap resulting in band structure changes. Laser shock annealing induced modulation of band structures in perovskites leads to remarkable improvement in their carrier lifetime, producing a responsivity (R) and detectivity (D*) of 2.45 A W-1 and 1.48 x 10(12) Jones, respectively. Besides, the stability testing under various harsh thermal and humid thermal conditions shows that laser shock annealing improves the stability of perovskite thin films as a result of the reduced PbI2 layer and residual tensile strain. The presented technology that utilizes laser shock annealing to modulate the ultrafast diffusion in the PbI2 layer provides a guideline for future improvement in the device performance and stability of hybrid organic-inorganic halide perovskites.

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