期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 9, 期 39, 页码 13640-13646出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1tc03057d
关键词
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资金
- National Natural Science Foundation of China [51472088, 51972117, U1601205]
- Guangzhou Municipal Science and Technology Bureau [202002030098]
A highly efficient broadband near-infrared emission phosphor LiScGe2O6:Cr3+ has been developed, showing promising internal and external quantum efficiencies. The NIR LED based on this phosphor exhibits high output power and photoelectric conversion efficiency for night-vision applications.
The discovery of high-efficiency broadband near-infrared (NIR) emission phosphors for light-emitting diodes (pc-LEDs) is of importance for optoelectronic devices and their emerging applications. Herein, a highly efficient broadband NIR emission phosphor LiScGe2O6:Cr3+ peaking at 886 nm with a full width at half maximum (FWHM) of 160 nm (similar to 2230 cm(-1)) is developed via a distorted octahedral site occupation strategy. Upon 480 nm blue-light excitation, the optimal phosphor composition LiSc0.93Ge2O6:0.07Cr(3+) presents an internal quantum efficiency (IQE) of 72.6% and high external quantum efficiency (EQE) of 39.9%. A NIR LED is fabricated based on this phosphor and a blue InGaN chip, which shows a maximum NIR output power of 407.3 mW at 300 mA driving current with a photoelectric conversion efficiency of similar to 8.9%, suggesting its high promise for night-vision applications. This work provides a new strategy for achieving high-efficiency Cr3+-doped NIR emission phosphors.
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