期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 3, 期 8, 页码 3418-3427出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c00396
关键词
graphene nanopores; green synthesis; 3D nanomaterials; negative differential resistance nanodevices; Esaki-diode behavior; quantum tunneling
资金
- Sungkyunkwan University (SKKU)
- Seoul National University
The study involved the preparation and investigation of a temperature-induced degenerate p-type graphene nanopore/reduced graphene oxide (GNP/rGO) heterojunction-based nanodevice, exhibiting a robust negative differential resistance (NDR) feature. Cellulose-based perforated graphene foams (PGFs) containing numerous nanopores and showing essential p-type semiconducting characteristics were synthesized, with an observed stable and reversible NDR peak at high temperatures. The involvement of O-2 gas in the ambient environment in water-based degeneration of the initial p-type regions around the GNPs led to the appearance of an intensive quantum tunneling NDR peak.
A temperature-induced degenerate p-type graphene nanopore/reduced graphene oxide (GNP/rGO) heterojunction-based nanodevice was prepared and studied for the first time, showing a robust negative differential resistance (NDR) feature. In this regard, cellulose-based perforated graphene foams (PGFs), containing numerous nanopores (with an average size of similar to 2 nm surrounded by nearly six-layer rGO walls) were synthesized using bagasse as a green starting material. The PGFs with an essential p-type semiconducting property showed a band gap energy of similar to 1.8 eV. The observed two-terminal NDR peak could present stable and reversible features at high temperatures of 586-592 K. It was demonstrated that the O-2 gas of the ambient would be involved in a crucial activity in water-based degeneration of the initial p-type regions around the GNPs and, consequently, the appearance of an intensive quantum tunneling NDR peak. An electron-band structure-based mechanism is proposed to describe the lateral quantum tunneling current within the degenerate p-type GNP and rGO heterojunction that is induced by the energized water molecules (EWMs). These results can shed light on more investigations regarding lateral quantum tunneling-based NDR features in upcoming and highly desired two-dimensional electronic nanodevices.
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