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The effect of dimensionality on the charge carrier mobility of halide perovskites

期刊

JOURNAL OF MATERIALS CHEMISTRY A
卷 9, 期 38, 页码 21551-21575

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ta03749h

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资金

  1. ISRO grant [STC-1563-PHY]
  2. UGC
  3. Department of Science and Technology [IF170678]
  4. CSIR
  5. Department of Science and Technology (DST), India under Clean Energy Research Initiative [DST/TMD/CERI/C140(G)]
  6. UKRI Global Challenge Research Fund project
  7. SUNRISE [EP/P032591/1]
  8. Newton-APEX (British Council, UK)
  9. DST India, through the INSPIRE Faculty Award [IFA-13 ENG-57]

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This review article focuses on the quantification of carrier mobility in perovskites with dimensional transformation and crystallinity, as well as the fundamental mobility limiting factors and recent advancements in the field, with a special emphasis on reduced dimensional perovskites and single crystal systems. The challenges and possible pathways for mobility enhancement in perovskites are also discussed in detail.
Metal halide perovskites (MHPs) have recently emerged as an ideal semiconductor for photovoltaic applications. Most of the advantageous properties of perovskites are dominated by their large charge carrier mobility (mu), which is a key parameter to gauge the photovoltaic performance and stability of MHPs. Simultaneously, the rich structural variation, form and crystallinity of perovskites underpin their carrier mobility. In this review article, we focus on the quantification of carrier mobility in perovskites with dimensional transformation and crystallinity. Furthermore, we have critically analyzed the variation in mobility values as probed by different analytical techniques. We also discuss the fundamental mobility limiting factors that hinder efficient charge transport in these materials and present the recent advancement with a special focus on the dimensionalities including reduced dimensional perovskites and single crystal systems. In addition, the present challenges and possible pathways for mobility enhancement are also discussed in detail.

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