期刊
NANOSCALE
卷 13, 期 37, 页码 15853-15858出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nr04723j
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资金
- Brazilian Nanocarbon Institute of Science and Technology (INCT/Nanocarbono)
- Brazilian Synchrotron Light Laboratory (LNLS)
- Fapesp [18/00823-0, 18/01808-5, 19/23488-5]
- CAPES
- Leverhulme trust
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [19/23488-5, 18/01808-5, 18/00823-0] Funding Source: FAPESP
Talc dielectric materials may serve as a promising alternative for high quality dielectric materials in future van der Waals devices. The study shows that talc-based TMDC transistors exhibit small hysteresis and negligible leakage current, while talc also demonstrates high optical performance for TMDC monolayers.
Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices.
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