Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

This study demonstrates the performance improvements of InGaN-based red lightemitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20mA were 0.6mW and 1.5%, which are 8.5% higher than those of the PLED. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

This study demonstrates the performance improvements of InGaN-based red light-emitting diodes by fabricating micro-holes in the planar mesa. The micro-hole LEDs exhibited a blue-shift in peak wavelengths and lower full width at half maximum compared to the planar LEDs. Additionally, the light output power and external quantum efficiency of micro-hole LEDs were higher than those of planar LEDs.