UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

We experimentally proved an effective use of UV-ozone oxide layer in junction passivation and current tunneling applications of crystalline silicon (c-Si) solar cells. The UV-ozone generated oxide layer can improve the passivation quality of aluminum oxide(AlOx) when inserted between the silicon wafer surface and atomic layer deposited(ALD) AlOx. When tested on junctions that moderately diffused by phosphorus and boron (sheet resistance R-sh similar to 110 Omega/square), the UV-ozone oxide and AlOx stack resulted in a J(0) no more than 12fA/cm(2). The same oxide layer is also considered as a passivating contact material. When applied as an interlayer between diffused silicon surface and aluminum contact, the passivated contact structure realized a contact resistivity (rho(c)) of similar to 1m Omega-cm(2) and similar to 25m Omega-cm(2) for boron and phosphorus passivating contact structures, respectively, with moderately doped diffusions.

Automated summary

Experimental results demonstrate the effective use of UV-ozone oxide layer in passivation and current tunneling applications of crystalline silicon solar cells. The combination of UV-ozone oxide and AlOx stack shows promising results in improving the passivation quality of moderately diffused junctions. The UV-ozone oxide layer is also considered as a passivating contact material and can achieve low contact resistivity for boron and phosphorus passivating contact structures with moderately doped diffusions.