Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies

Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V-oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I-sc. This suggests that each cell type/make degrades via different degradation pathways.

Automated summary

Bifacial technology in solar cells offers higher power output and lower levelized cost of energy compared to monofacial counterparts. Testing the adverse effects of ultraviolet-induced degradation on different high-efficiency silicon wafer-based bifacial cell technologies revealed various degrees of power loss and degradation pathways for different cell types.