Extremely large magnetoresistance in high-mobility SrNbO3/SrTiO3 heterostructures

An extremely large linear magnetoresistance (LMR) is a ubiquitous phenomenon emerging from topological Dirac and Weyl semimetals. However, the connection between an LMR and a nontrivial topology is under extensive debate. In this paper, by precisely controlling the thickness of SrNbO3 thin films grown on SrTiO3 substrates, we observe an LMR over a large carrier density range with a magnetoresistance as high as 150 000% at a carrier density n similar to 10(21) cm(-3), far away from the quantum-limit regime. The temperature-, magnetic-field-, and carrier-density-dependent LMR in SrNbO3/SrTiO3 heterostructures provides compelling evidence of a mobility-driven LMR in coherent electronic systems. Our results uncover the general principle of an LMR and shed light on proper categorization of transport properties in topological and correlated materials.

Automated summary

This paper presents the observation of an extremely large linear magnetoresistance (LMR) in SrNbO3/SrTiO3 heterostructures over a large carrier density range, with a high magnetoresistance of up to 150,000% at a carrier density far from the quantum limit regime. The study provides compelling evidence of a mobility-driven LMR in coherent electronic systems and sheds light on the proper categorization of transport properties in topological and correlated materials.