Bipolar magnetic semiconducting behavior in VNbRuAl

We report the theoretical prediction of a class of spintronic materials, namely, bipolar magnetic semiconductors (BMSs), also supported by our experimental data. BMSs possess a unique band structure with unequal band gaps for spin-up and spin-down channels and thus are useful for tunable spin-transport-based applications such as spin filters. The valence band and conduction band in BMSs approach the Fermi level through opposite spin channels and hence facilitate reversible spin polarization that is controllable via applied gate voltage. We report the quaternary Heusler alloy VNbRuAl to exactly possess the band structure of a BMS. A rigorous normal x-ray diffraction (XRD) fitting along with synchrotron XRD data confirms that this alloy crystallizes in the LiMgPdSn structure with partial B2 disorder. Transport measurements show a two-channel semiconducting behavior and a quasilinear dependence of negative magnetoresistance, indicating the possible semiconducting nature. The thermoelectric power data not only confirm the semiconducting nature but also give a strong indication of the BMS nature. Interestingly, VNbRuAl also appears to show features of a fully compensated ferrimagnetic (FCF) behavior with vanishing magnetization and significantly high ordering temperature (>900 K). Theoretical simulations of the special quasirandom structure predict partial B2 disorder to be mainly responsible for the coexistent BMS and FCF-like behavior. This study opens up the possibility of finding another class of materials for antiferromagnetic spintronics, with great significance for both fundamental and applied fronts.

Automated summary

This study reports the theoretical prediction and experimental data of a class of spintronic materials called bipolar magnetic semiconductors (BMSs), which have unique band structure suitable for spin-transport-based applications. The quaternary Heusler alloy VNbRuAl is found to possess the band structure of a BMS, with transport measurements confirming semiconducting behavior and hints of fully compensated ferrimagnetic behavior. Theoretical simulations indicate that the coexistence of BMS and fully compensated ferrimagnetic behavior is mainly due to partial B2 disorder in the structure.