Nanospike Electrode Designs for Improved Electrical Performance in Nanoscale Organic Thin-Film Transistors

This work presents a design approach for substantial improvement of the electrical performance in short-channel organic thin-film transistors (TFTs). The design combines features that can improve charge injection to significantly reduce the contact resistance which limits performance of short-channel organic TFTs. Additionally, this design is very effective at mitigating short-channel effects that can be dominant in nanoscale TFTs. TFTs were fabricated by using the semiconductors dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) and pentacene with channel lengths in the ranges 200-800 nm and 10-100 nm, respectively. The total source-to-drain resistance is reduced to about 50 ohm.cm, which is among the lowest values reported for organic TFTs.

Automated summary

This design approach significantly improves the electrical performance and mitigates short-channel effects in short-channel organic thin-film transistors, reducing the total source-to-drain resistance to about 50 ohm.cm.