期刊
PHYSICAL REVIEW B
卷 104, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.104.165427
关键词
-
资金
- National Natural Science Foundation of China [11574051, 11874117, 11604134, 11904101, 12174059]
- Natural Science Foundation of Shanghai [21ZR140820]
Research shows that MBr2 (M = Ru, Os) monolayers are ferrovalley materials with large valley polarization up to 530 meV, and compressive strain can induce phase transitions to complete valley-polarized metals, eventually forming Chern insulators, offering a pathway for low-dissipation electronics devices.
The target of valleytronics developments is to manipulate the valley degree of freedom and utilize it in microelectronics as charge and spin degrees of freedom. Based on first-principles calculations, we demonstrate that MBr2 (M = Ru, Os) monolayers are intrinsically ferrovalley materials with large valley polarization up to 530 meV. Compressive strain can induce phase transitions in the materials from ferrovalley insulators to complete valley-polarized metals, called half-valley metals, in analogy to the concept of half metals in spintronics. With the increase of the strain, the materials become Chern insulators, whose edge states are chiral-spin-valley locking. The phase transition is caused by sequent band inversions of the dxy/dx2-y2 and dz2 orbitals at K- and K+ valleys, analyzed based on a strained k center dot p model. Our work provides a pathway for carrying out low-dissipation electronics devices with complete spin and valley polarizations.
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