High performance near-infrared phototransistors via enhanced electron trapping effect

A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W-1, high detectivity of 10(16) Jones and fairly good photosensitivity in the order of 10(6).

Automated summary

A high performance near-infrared organic phototransistor has been achieved by incorporating a small molecule acceptor as an electron trapping site in narrow-bandgap conjugated polymer films. With just a 10% addition of the acceptor molecule, the photoresponse to 850 nm light has been significantly improved, reaching a maximum photoresponsivity of 2000 A W-1, high detectivity of 10(16) Jones, and a fairly good photosensitivity in the order of 10(6).