4.7 Article

Operando Raman spectroscopic evidence of electron-phonon interactions in NiO/TiO2 pn junction photodetectors

期刊

CHEMICAL COMMUNICATIONS
卷 57, 期 92, 页码 12333-12336

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1cc05303e

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资金

  1. National Natural Science Foundation of China [21503021, 21773080]
  2. Education Department of Jilin Province, China [JJKH20200650KJ, JJKH20180550KJ]

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The built-in potential field of the NiO/TiO2 interface in the photodetectors decreases the charge transfer resistance and changes the vibrational frequency of TiO2's phonon modes, which enhances the responsiveness of the photodetectors. Operando Raman spectroscopy has been proven to be a powerful tool for manufacturing highly responsive photodetectors.
The pn junctions significantly affect the responsivity of photodetectors (PDs). However, the enhancement mechanism of the pn junction is still unclear. Herein, operando Raman spectroscopy was employed to study PDs with NiO/TiO2 pn junctions composed of p-NiO nanoparticles (NPs) and n-TiO2 nanotube arrays (TNAs). The results suggest that the built-in potential field of the NiO/TiO2 interface decreases the charge transfer resistance and changes the vibrational frequency of the phonon modes of TiO2, which is attributed to the electron-phonon coupling effect. Operando Raman spectroscopy is proved to be a powerful tool for manufacturing highly responsive PDs.

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