期刊
NANOSCALE
卷 13, 期 45, 页码 18947-18954出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nr05560g
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资金
- University of Electronic Science and Technology of China
- Natural Science Foundation of China [11675195, 12074381]
This study investigates the superconducting properties of single-layer transition metal di-nitrides, and proposes enhancement strategies through surface passivation and light atom substitution. The findings provide insights into tuning superconductivity and suggest a promising pathway for next-generation nanoelectronics with 2D superconductors.
Two-dimensional (2D) transition metal di-nitrides (TMN2) have been arousing great interest for their unique mechanic, electronic, optoelectronic, and magnetic properties. The recent successful growth of monolayer MSi2N4 (M = Mo and W) further motivates us to explore new physics and unusual properties behind this family. By using first-principles calculations and Bardeen-Cooper-Schrieffer theory, we predicted the existence of the superconductivity in single-layer (SL) 1T- and 1H-TaN2 with superconducting transition temperatures (T-c) of similar to 0.86 and 1.3 K. Specifically, the T-c could be greatly enhanced to similar to 24.6 K by passivating the TaN2 monolayer with Si-N bilayers. Furthermore, the superconductivity could be increased to similar to 30.4 K via substituting lighter Nb for Ta. This enhancement of superconductivity mainly stems from the softer vibration modes consisting of in-plane Ta/Nb vibrations mixed with Si-xy vibrations. The superconductivity can be further tuned by applying external strains and carrier doping. This enhancement strategy of surface passivation and light atom substitution would suggest a new platform for 2D superconductors and provide an instructive pathway for next-generation nanoelectronics.
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