期刊
JOURNAL OF MATERIALS CHEMISTRY A
卷 9, 期 47, 页码 26717-26726出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ta04137a
关键词
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资金
- National Natural Science Foundation of China [11904415, 11972382]
- Fundamental Research Funds for the Central Universities [74130-31610039, 74130-18841221]
- Singapore Ministry of Education Academic Research Fund Tier 2 [MOE2015-T2-1-016, MOE2018-T2-1-019, MoE T1 R-284-000196-114]
- Singapore National Research Foundation under CRP Award [NRF-CRP10-2012-02]
- U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Science and Engineering [DESC0012704]
- SSLS via NUS Core Support [C-380-003-003001]
This study introduced ordered oxygen vacancies through self-structural optimization, forming a ferromagnetic charge-ordering/charge-density-wave state in La0.7Sr0.3MnO3, with properties influenced by magnetic field, temperature, and superlattice configuration, and high magnetic field inducing re-entrance to a ferromagnetic insulator state.
The charge-density wave is correlated with the properties in transition metal oxides, and regulating this state is important to explore the potential of oxides. Defects could modulate the local environment, in which the effect is subject to the concentration and arrangement, and an artificial arrangement of defect-ordering is highly expected to design the material properties. In this work, the ordering of oxygen vacancies with a preferred location on the (001) La/SrO plane by self-structural optimization was induced in La0.7Sr0.3MnO3/SrTiO3 superlattices with medium oxygen pressure during SrTiO3 deposition, and then the ferromagnetic charge-ordering (CO)/charge-density-wave (CDW) state was formed in La0.7Sr0.3MnO3 with susceptibility to magnetic field, temperature, and superlattice configuration. In addition, re-entrance to the ferromagnetic insulator CO/CDW could be induced by a high magnetic field. The selective occupancy of oxygen vacancies on the (001) La/SrO plane and the phase fluctuation around the CO/CDW-to-ferromagnetic metal phase transition were critical to the above properties. The interfacial diffusion with atomic-level resolution to control oxygen vacancies could be used in other magnetoelectric systems and corresponding device applications.
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