Towards achieving a large-area and defec t-free nano-line pattern via controlled self-assembly by sequential annealing

Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS) tail (i.e., DPOSS-PS) has been precisely self-assembled into perpendicularly oriented lamellae structures. A followup thermal annealing further significantly promotes the long-range ordering, giving rise to highly oriented and defect-free sub-10 nm line patterns (up to areas of several mu m(2)). The solvent evaporation and thermal annealing process, together with the strong segregation strength (chi N) of DPOSS-PS, play crucial roles in the self-orientation and width-reduction of the line patterns. This simple processing of the easy-accessed giant surfactants results in a facile and more economic approach for large-scale nano sized line grating fabrication.

Automated summary

Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. The process involves solvent vapor annealing to self-assemble the giant surfactant into lamellae structures, followed by thermal annealing to promote long-range ordering. This simple and economic approach results in highly oriented and defect-free sub-10 nm line patterns on a large scale.