Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process

Chalcopyrite Cu(In,Ga)Se-2 (CIGS) thin films deposited in a low-temperature process (450 degrees C) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.

Automated summary

Different Ag treatment processes were employed to enhance the quality of CIGS thin films deposited at low temperatures, demonstrating improvements in crystallinity and device efficiency due to Ag precursor and surface treatment. The former had a more significant impact, with a reduction in Urbach energy observed with Ag doping. This study aims to provide a feasible Ag-doping process for high-quality CIGS films in low-temperature deposition processes.