期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 9, 期 8, 页码 2912-2918出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0tc06004f
关键词
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资金
- NSF of China [42072055, 41772042, 41774099]
- West Light Foundation of the Chinese Academy of Sciences
- Youth Innovation Promotion Association of CAS [2019390]
- Supercomputer Center of Fujian Institute of Research on the Structure of Matter (FJIRSM)
This study investigated the vibrational, electrical and structural properties of gallium sulfide (Ga2S3) under different pressure conditions, revealing a first-order structural phase transition and semiconductor-to-metal transformation at specific pressure points. The research also observed new high-pressure polymorphs upon decompression, providing insights into the high-pressure behaviors of similar A(2)B(3)-type structural compounds.
The vibrational, electrical and structural properties of gallium sulfide (Ga2S3) were explored by Raman spectroscopy, electrical conductivity measurements, high-resolution transmission electron microscopy and first-principles theoretical calculations under different pressure environments up to 36.4 GPa. Upon compression, Ga2S3 underwent a first-order structural phase transition accompanied by a semiconductor-to-metal transformation at 17.2 GPa under non-hydrostatic conditions, whereas, the transition occurred at a much lower pressure of 11.3 GPa under hydrostatic conditions because of the influence of the pressure medium. Upon decompression, two possible new high-pressure polymorphs were observed at 8.0 and 3.0 GPa under non-hydrostatic conditions, and similar transition points were obtained under hydrostatic conditions. The structural and electrical transport evolution for Ga2S3 upon compression and decompression can help us to deeply understand the high-pressure behaviors of other similar A(2)B(3)-type structural compounds.
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