Hysteretic effects and magnetotransport of electrically switched CuMnAs

Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this paper, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to similar to 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs.

Automated summary

This paper investigates magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states, revealing hysteresis phenomena and the resilience of the switching signal. These properties are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs.