Layer number-dependent optoelectronic characteristics of quasi-2D PBA2(MAPbBr3)n-1PbBr4 perovskite films

Halide perovskites have attracted attention because of their potential in the fields of light-emitting diodes, lasers and detectors. Herein, a series of quasi-2D PBA(2)(MAPbBr(3))(n-1)PbBr4 perovskite films have been synthesized and the physical behavior behind their optoelectronic properties, which is dependent on the layer number (n), has been discussed in detail. The temperature-dependent photoluminescence (PL) test indicates that the perovskite film with n = 7 has outstanding PL characteristics, owing to its long radiative lifetime at different temperatures. Temperature-dependent amplified spontaneous emission (ASE) has been employed for the first time to scan the ASE threshold of our films, showing that the ASE threshold decreases from 29.91 mu J cm(-2) (3D perovskite film) to 19.23 mu J cm(-2) (n = 3). The current-voltage test with strong light bias takes the lead in pointing out that the detector based on the 3D perovskite film (n = proportional to) exhibits excellent opto-current properties in comparison with other quasi-2D perovskite films. Our results provide a comprehensive insight into the optoelectronic properties of these quasi-2D perovskite films.

Automated summary

Halide perovskites have shown potential in light-emitting diodes, lasers, and detectors, and a series of quasi-2D PBA(2)(MAPbBr(3))(n-1)PbBr4 perovskite films have been synthesized to study their optoelectronic properties. The results indicate that the physical behavior and performance of these films are dependent on the layer number (n). Temperature-dependent photoluminescence and amplified spontaneous emission tests reveal the unique characteristics of the perovskite films with different layer numbers.