2D Boron Nitride Heterostructures: Recent Advances and Future Challenges

Hexagonal boron nitride (h-BN) is one of the most attractive 2D materials because of its remarkable properties. Combining h-BN with other components (e.g., graphene, carbonitride, semiconductors) to form heterostructures opens new perspectives to developing advanced functional devices. In this review, the state-of-the-art in h-BN heterojunctions is highlighted. The preparation of high-quality 2D h-BN structures with fewer defects can maximize its intrinsic properties, such as thermal conductivity and electrical insulation, which are particularly important in 2D van der Waals electronics. On the other hand, the controlled introduction in 2D h-BN of multiple defects creates new properties and advanced functions. In this last case, only through a better understanding of the nature and function of defects, it is possible to develop advanced applications based on h-BN heterostructures. Engineering of the heterojunctions, such as the design of bonding at the interfaces, also plays a primary role. Several applications are proposed for h-BN heterostructures, mostly in sensing and photocatalysis, and some new perspectives worth further studies are opened. Finally, the current challenges and the rising opportunities for the future developments of next-generation h-BN heterostructures are discussed.

Automated summary

Hexagonal boron nitride (h-BN) is a highly attractive 2D material due to its remarkable properties, and its combination with other components to form heterostructures shows great potential for developing advanced functional devices. High-quality 2D h-BN structures with fewer defects can maximize its intrinsic properties, while controlled introduction of multiple defects in 2D h-BN can create new properties and advanced functions. Engineering of heterojunctions, including interface bonding design, plays a crucial role in developing advanced applications based on h-BN heterostructures in the future.