A parameter extraction method of the Schottky diode millimeter wave equivalent circuit model

A millimeter wave equivalent circuit model parameters extraction method for Schottky diodes is proposed in this paper. The pad capacitance has been determined by using open circuit test structure, and the feedline inductance has been determined by using short-circuit test structure. The parasitic resistance has been extracted by using DC method and AC method respectively. An excellent fit between measured and simulated S-parameters in the frequency range of 1 similar to 40 GHz is obtained for GaAs Schottky diode.

Automated summary

This paper proposes a method for extracting millimeter wave equivalent circuit model parameters for Schottky diodes. Parameters such as pad capacitance, feedline inductance, and parasitic resistance are determined using various test structures. Excellent fit between measured and simulated S-parameters is achieved in the frequency range of 1 to 40 GHz for GaAs Schottky diode.