期刊
RSC ADVANCES
卷 11, 期 62, 页码 38949-38955出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ra06685d
关键词
-
资金
- National Natural Science Foundation of China [51972283, 91833301]
- Key Research and Development Program of Zhejiang Province [2021C01030]
The study utilized multiple quantum wells structures and successfully fabricated a p-GaN/MQWs/n-ZnO diode, achieving efficient UV emission at room temperature.
5-period ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据