期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 9, 期 48, 页码 17543-17543出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1tc90260a
关键词
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The study investigated space-charge accumulation and band bending at conductive P3HT/PDIF-CN2 interfaces using scanning-Kelvin probe microscopy, providing valuable insights for researchers in this field.
Correction for 'Space-charge accumulation and band bending at conductive P3HT/PDIF-CN2 interfaces investigated by scanning-Kelvin probe microscopy' by Federico Chianese et al., J. Mater. Chem. C, 2021, DOI: 10.1039/d1tc04840f.
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