4.8 Article

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires

期刊

NANOSCALE
卷 13, 期 48, 页码 20417-20424

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nr07047a

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资金

  1. National Natural Science Foundation of China [61774007, 11974030]
  2. National Key Research and Development Program of China [2016YFA0300802, 2017YFA0204901]
  3. Beijing Natural Science Foundation [1202010]

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This study reports the observation of anisotropic magnetoresistance in a single SmB6 nanowire, showcasing high-symmetry crystal facets and immunity to magnetic dopant pollution. The cosine function behavior of the AMR provides evidence supporting the topologically non-trivial nature of the surface-states by rotation of the in-plane magnetic field.
SmB6, which opens up an insulating bulk gap due to hybridization between itinerant d-electrons and localized f-electrons below a critical temperature, turns out to be a topological Kondo insulator possessing exotic conducting states on its surface. However, measurement of the surface-states in SmB6 draws controversial conclusions, depending on the growth methods and experimental techniques used. Herein, we report anisotropic magnetoresistance (AMR) observed in the Kondo energy gap of a single SmB6 nanowire that is immune to magnetic dopant pollution and features a square cross-section to show high-symmetry crystal facets. The AMR clearly shows a cosine function of included angle theta between magnetic field and measuring current with a period of pi. The positive AMR is interpreted by anisotropically lifting the topological protection of spin-momentum inter-locking surface-states by rotating the in-plane magnetic field, which, therefore, provides the transport evidence that supports the topologically nontrivial nature of the SmB6 surface-states.

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